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SiC-device
Features of SiC devices
– Superior Semiconductor Performance –
SiC (Silicon Carbide) devices, which support the next generation of power electronics, possess numerous characteristics that surpass conventional silicon (Si) devices.
With high efficiency, high voltage resistance, and the ability to operate at high temperatures, SiC devices are attracting attention across a wide range of applications from industrial equipment to electric vehicles and renewable energy sectors.
At Shindengen, we leverage cutting-edge SiC technology to develop high-performance, highly reliable products that meet our customers’ needs.
SiC Schottky Barrier Diodes
We are expanding our lineup of SiC Schottky Barrier Diodes (SiC-SBD) with compact surface-mount packages, offering 650V and 1200V options.
SiC-SBDs feature ultra-fast recovery characteristics (reduced trr), high voltage resistance, and high-temperature operation, enabling significant reductions in switching losses and improved efficiency.
In addition, we plan to develop automotive-grade products and introduce a new series focused on achieving even lower VF, providing a product range that meets diverse application requirements.
Recovery characteristics of 600V withstand voltage products
Recovery characteristics of 1200V withstand voltage products
SiC-MOSFETs
SiC-MOSFETs feature low switching losses, excellent high-temperature performance, and enable high-speed operation.
Furthermore, due to their low on-resistance, they serve as a replacement for conventional switching devices such as IGBTs in applications above 650V, contributing to the downsizing of equipment and cooling units in inverters and converters.
Wide gate voltage range
Wider maximum ratings allow for easier circuit design.
Low loss even at high temperatures
Shindengen SiC MOSFETs offer flat on-resistance up to the temperature range of actual use.
SiC-MOSFET Modules
Power semiconductors used in various applications such as full-bridge converters, bridgeless PFC, inverter circuits, and H-bridge motor drive circuits are increasingly required to achieve higher power conversion efficiency.
To meet these demands, Shindengen is advancing the development of SiC MOSFET modules that pursue high efficiency and low noise.
Smaller Ringing
Well-considered current path (Magnetic coupling free)
Stable turn-off
Turn-off without the rise of Vgs
Smaller Surge Voltage
Lower Inductance, Lower Surge
Easier Noise Control
Fast-recovery oscillation make it easier
