SiC diodes

▼S20SC65WV
Contribute to greater reduction of power consumption and lower noise


■SiC schottky barrier diodes
■20% VF improvement compared to conventional FRD
■77% improvement in recovery characteristics compared to conventional FRD

Reduction of power consumption
20% VF improvement compared to conventional FRD.

Achieves lower noise
77% improvement in recovery characteristics compared to conventional FRD.
Equivalent Circuit


Product Specifications
Part Name Tstg [°C] Tj [°C] VRRM [V] IF typ. [A] VF typ. [V] IR max. [uA] Package
(JEDEC CODE)
Package
(HOUSE NAME)
S20SC65WV -55~175 175 650 20 1.60
(Per leg)
100
(Per leg)
TO-247AD MTO-3PV
1.2kV SiC-SBD
Under planning
-55~175 175 1,200 20 1.50
(Per leg)
200
(Per leg)
TO-247AD MTO-3PV

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