Ideal diode ICs


MF2003SV V-DiodeTM

Pch_MOSFET with built-in reverse current protection function
This is a Pch_MOSFET with built-in reverse current protection function.
Achieves low dissipation and downsizing compared to conventional diodes (SBD) in reverse connection and reverse current prevention applications.

Spec.

Heat generation/dissipation reduction
Reduction of heat generation and dissipation.
Built-in MOSFET Ron≒57mΩ

Equipped with active clamp function
Equipped with function which clamps at approximately ∆VDS≈40V to prevent breakdown of the built-in Pch MOSFET.

Compact package
Utilizes a WSON8-4040 (4.0mm x 4.0mm) leadless package with wettable flank terminals.

Block Diagram


MF2003SV
Package WSON8-4040
Operating voltage 2.5 to 40V
Average current 4A
Quiescent current ≦3μA
Built-in Pch MOSFET Ron 57mΩ(Typ.)
Reverse connection protection Built-in
Reverse current protection Built-in
(25mV offset comparator)
IFSM 70A
Toff 500ns(Typ.)



MF2007SW

[under development]
High-side gate driver with built-in reverse current protection function
An Nch_MOSFET gate driver IC with built-in reverse current protection function.
Combination with an externally connected Nch_MOSFET achieves low dissipation and downsizing compared to conventional diodes (SBD) in reverse connection and reverse current prevention applications.
Can also be used as a bidirectional conduction ON/OFF switch (for semiconductor relays, etc.).

Contact information

Heat generation/dissipation reduction

Aims to reduce heat generation and dissipation compared to SBD by utilizing MOSFET.
Heat generation and dissipation are dependent upon externally connected Nch_MOSFET.

Selectable Reverse Current Protection Function
The reverse current protection function can be switched ON and OFF via the REV terminal Hi/Lo status.
No function : Bidirectional conduction is possible.

Wide input voltage range

Compatible with a wide range of input voltages from 3.5 to 70V, which allows for use in a wide range of devices.

Block Diagram


MF2007SW
Package TSSOP10
Standby current ≦10μA

(external signal)

Booster circuits output current 70μA(Typ.)
Boost voltage 12V(Typ.)
Reverse current_OFF time 300ns(Typ.)
EN_OFF time 50ns(Typ.)
When the power supply is connected in reverse Current reduction,

External gate discharge

Charge pump Built-in capacitor

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