Ideal diode ICs
|Pch_MOSFET with built-in reverse current protection function|
|This is a Pch_MOSFET with built-in reverse current protection function.
Achieves low dissipation and downsizing compared to conventional diodes (SBD) in reverse connection and reverse current prevention applications.
|Heat generation/dissipation reduction|
|Reduction of heat generation and dissipation.
Built-in MOSFET Ron≒57mΩ
|Equipped with active clamp function|
|Equipped with function which clamps at approximately ∆VDS≈40V to prevent breakdown of the built-in Pch MOSFET.
|Utilizes a WSON8-4040 (4.0mm x 4.0mm) leadless package with wettable flank terminals.
|Operating voltage||2.5 to 40V|
|Built-in Pch MOSFET Ron||57ｍΩ(Typ.)|
|Reverse connection protection||Built-in|
|Reverse current protection||Built-in
(25mV offset comparator)
High-side gate driver with built-in reverse current protection function
|An Nch_MOSFET gate driver IC with built-in reverse current protection function.
Combination with an externally connected Nch_MOSFET achieves low dissipation and downsizing compared to conventional diodes (SBD) in reverse connection and reverse current prevention applications.
Can also be used as a bidirectional conduction ON/OFF switch (for semiconductor relays, etc.).
|Heat generation/dissipation reduction
|Aims to reduce heat generation and dissipation compared to SBD by utilizing MOSFET.
Heat generation and dissipation are dependent upon externally connected Nch_MOSFET.
|Selectable Reverse Current Protection Function|
|The reverse current protection function can be switched ON and OFF via the REV terminal Hi/Lo status.
No function : Bidirectional conduction is possible.
|Wide input voltage range
|Compatible with a wide range of input voltages from 3.5 to 70V, which allows for use in a wide range of devices.
|Booster circuits output current||70μA（Typ.）|
|Reverse current_OFF time||300ns（Typ.)|
|When the power supply is connected in reverse||Current reduction,
External gate discharge
|Charge pump||Built-in capacitor|