Low withstand voltage MOSFETs

▼LG(TOLL)package
Medium withstand voltage of 100V to 200V newly deployed in a compact, thin package！

▼Dual MOSFET
Two low dissipation power MOSFET elements in 1 package,
Contributes to circuit downsizing and weight reduction

▼EETMOS 5 series
This series greatly improves upon the trench gate structure to achieve low Q_g and low noise

▼EETMOS 3/4 series
Cu clip structure achieves low R_on and large current
40V to 120V low withstand voltage MOSFETs

▼EETMOS 3 series
Optimized trench gate structure and trench layout,
23% R_on・A reduction

■Contributing to device downsizing and increased efficiency through low R_on
■Mounting area reduced by approximately 25% compared to D2PAK（TO-263）
■T_ch=175°C　Expansion of automotive application/reduced size and slim package
　JEDEC PKG Code MO-299B
■250A ultra high current devices
■Use of a wettable flank structure makes compatibility with automatic appearance inspections after mounting possible
■Products can also be developed with Kelvin source terminals to reduce switching loss

Contributes to device downsizing

Mounting area reduced by approximately 10% compared to conventional conventional package(D2PAK（TO-263）).These features can contribute to equipment downsizing.

Compatible with automatic appearance inspections

Products can also be developed with Kelvin source terminals to reduce switching loss.

Product Specifications

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		C_iss(typ.)^※2[pF]	C_oss(typ.)^※2[pF]	C_rss(typ.)^※2[pF]	Status
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	C_iss(typ.)^※2[pF]	C_oss(typ.)^※2[pF]	C_rss(typ.)^※2[pF]	Status
P280LG4GNK	40	280	3.0	0.44	0.55	23500	4800	750	Planning
P280LG6GNK	60	280	3.0	0.61	0.77	14630	6074	277	Planning
P232LG10GNK	100	232	3.0	1.29	1.62	9325	4170	128	RS
P166LG15GNK	150	166	3.0	3.56	4.45	TBD	TBD	TBD	Planning
P120LG20GNK	200	120	3.0	7.8	9.8	5822	447	27	RS

※1 V_GS=10V
※2 V_DS=25V

■40V to 100V low withstand voltage Dual MOSFETs
■Two low dissipation power MOSFET elements in 1 package
■Equipped with new structure MOSFET achieves even greater characteristic improvements over Shindengen conventional products
■ 5×6 mm size package(Can replace SOP8 and HSON types)
■Achieves low Ron and downsizing
■Alleviates substrate stress
■Improves solder wettability and provides high reliability

This contributes to circuit downsizing and weight reduction

Allows for a reduction in mounting area and number of components compared to use of two 1 element devices. This contributes to circuit downsizing and weight reduction.

This contributes to a reduction in switching loss

Reduction of capacity from Shindengen conventional products reduces FOM (R_on×C_iss) by 25%.This allowed for even greater characteristics improvement over Shindengen conventional products.

Achieves downsizing and reduced R_on

Achieves downsizing and reduced R_on through a substantial shift to low resistance and improved heat dissipation.

Realizes high reliability mounting

Alleviates substrate stress while the wettable flank structure improves wettability visibility to provide higher reliability.

Product Specifications

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P20LF4QTKD	40	20	2.0	12.3	15.3	EETMOS^®4
P41LF4QTKD	40	41	2.0	5.3	6.7	EETMOS^®4
P50LF4QTKD	40	50	2.0	4.4	5.5	EETMOS^®4
P15LF6QTKD	60	15	2.0	24.0	30.0	EETMOS^®4
P33LF6QTKD	60	33	2.0	10.0	12.5	EETMOS^®4
P33LF6QLKD	60	33	2.0	10.5	13.1	EETMOS^®4
P39LF6QTKD	60	39	2.0	8.3	10.4	EETMOS^®4
P12LF10SLKD	100	12	2.0	34.0	42.0	EETMOS^®3
P17LF10SLKD	100	17	2.0	29.0	36.0	EETMOS^®3

※１：V_GS=10V

■40V to 200V low withstand voltage MOSFETs
■This series greatly improves upon the trench gate structure of the conventional EETMOS 4 series to achieve low Q_g and low noise
■Cu clip structure achieves low R_on and downsizing

Achieves low Q_g and low noise

This series greatly improves upon the trench gate structure of the conventional EETMOS 4 series to achieve low Q_g and low noise.Comparison of power supply synchronous rectified waves.

Low R_on and low Q_g effects achieve low dissipation and high efficiency

Comparison carried out with conventional processes as 1. Reduced power consumption by 37% in the V_DS=40V class and by 46% in the V_DS=200V class.

Achieves low R_on and low Q_g

Low R_on and low Q_g effects achieve low dissipation and high efficiency. (Compared to conventional EETMOS 4 under same chip conditions)

Product Specifications

LF package (5×6mm)

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P180LF4GNK	40	180	3.0	1.01	1.23	Planning
P120LF6GNK	60	120	3.0	1.60	2.00	RS
P74LF10GNK	100	74	3.0	4.90	6.20	Planning
P36LF20GNK	200	36	3.0	20.70	25.90	Planning

FZ-7p package (TO-263SC)

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P240FZ4GNKA	40	240	3.0	0.85	1.07	Planning
P240FZ6GNKA	60	240	3.0	0.91	1.20	Planning
P130FZ10GNKA	100	130	3.0	3.70	4.60	Planning
P58FZ20GNKA	200	58	3.0	14.30	17.90	Planning

LG package (TOLL)

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P280LG4GNK	40	280	3.0	0.50	0.63	Planning
P280LG6GNK	60	280	3.0	0.77	0.96	Planning
P232LG10GNK	100	232	3.0	1.83	2.20	RS
P85LG20GNK	200	85	3.0	8.70	10.90	RS

※１：V_GS=10V

■40V to 120V low withstand voltage MOSFETs
■5×6mm exterior (can replace SOP8 and HSON types)
■Cu clip structure achieves low R_on and large current(up to 140A)
■Use of gull-wing shape for one side of lead alleviates substrate stress
■Plating of the lead tip improves solder wettability and provides high reliability

Spec.

Achieves downsizing and reduced R_on resistance

Uses a Cu clip structure which significantly reduces low resistance and improves heat dissipation, reduces R_on by 40% compared to Shindengen conventional products, and also reduces mounting area by 52%.

Strong board mounting

Gull-wing shaped leads allow for stronger board mounting,

Product Specifications

LF package (5×6mm)

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P24LF4QLK	40	24	2.0	9.60	12.0	MP
P70LF4QLK	40	70	2.0	3.60	4.50	MP
P105LF4QLK	40	105	2.0	2.10	2.70	MP
P140LF4QLK	40	140	2.0	1.17	1.42	MP
P18LF6QLK	60	18	2.0	21.0	26.0	MP
P38LF6QLK	60	38	2.0	7.90	9.90	MP
P64LF6QLK	60	64	2.0	4.50	5.70	MP
P98LF6QLK	60	98	2.0	2.50	3.20	MP
P46LF7R5SLK	75	46	2.0	8.20	10.30	MP
P72LF7R5SLK	75	72	2.0	4.60	5.80	MP
P32LF10SLK	100	32	2.0	15.70	19.70	MP
P50LF10SLK	100	50	2.0	9.00	11.30	MP
P25LF12SLK	120	25	2.0	23.00	29.00	MP
P40LF12SLK	120	40	2.0	13.00	16.30	MP

FZ-7p package (TO-263SC)

Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	V_TH typ. [A]	typ.	max.	Series
P240FZ4QNKA	40	240	3.0	1.01	1.27	MP
P170FZ6QNKA	60	170	3.0	1.94	2.50	MP

※１：V_GS=10V

■40~120V MOSFET
■Optimized trench gate structure and trench layout
■23% R_on・A reduction compared to conventional types
■LA(5×6), FB(TO-252), FP(TO-263Adv.), FTO-220AG

Spec.

Achieve 23% R_on・A reduction

100V products achieve 23% R_on・A reduction compared to conventional types.

Product Specifications

Part Name	V_DS min. [V]	I_D max. [A]	R_on [mΩ]^※１		Series
Part Name	V_DS min. [V]	I_D max. [A]	typ.	max.	Series
P24B4SB	40	24	14.8	18.5	FB
P60B4SN	40	60	3.2	4.0	FB
P16B6SB	60	16	29.0	37.0	FB
P60B6SN	60	60	5.3	6.7	FB
P8B10SB	100	8	75.0	94.0	FB
P40B10SN	100	40	13.4	16.8	FB
P32B12SN	120	32	20.0	25.0	FB
P24B15SL	150	24	33.0	42.0	FB
P86F6SN	60	86	2.4	3.0	FTO-220AG
P66F7R5SN	75	66	4.0	5.0	FTO-220AG
P82F7R5SN	75	82	3.0	3.8	FTO-220AG
P22F10SN	100	22	22.0	28.0	FTO-220AG
P40F10SN	100	40	8.5	10.7	FTO-220AG
P50F10SN	100	50	6.9	8.7	FTO-220AG
P32F12SN	120	32	12.4	15.5	FTO-220AG
P40F12SN	120	40	9.5	11.9	FTO-220AG

※１：V_GS=10V

Low withstand voltage MOSFETs

Medium withstand voltage of 100V to 200V
newly deployed in a compact, thin package！

Two low dissipation power MOSFET elements in 1 package,
Contributes to circuit downsizing and weight reduction

This series greatly improves upon the trench gate structure to
achieve low Q_g and low noise.

Cu clip structure achieves low R_on and large current
40V to 120V low withstand voltage MOSFETs

Optimized trench gate structure and trench layout.23% R_on・A reduction

Low withstand voltage MOSFETs

Medium withstand voltage of 100V to 200Vnewly deployed in a compact, thin package！

Two low dissipation power MOSFET elements in 1 package,Contributes to circuit downsizing and weight reduction

This series greatly improves upon the trench gate structure to achieve low Qg and low noise.

Cu clip structure achieves low Ron and large current40V to 120V low withstand voltage MOSFETs

Optimized trench gate structure and trench layout.23% Ron・A reduction

Medium withstand voltage of 100V to 200V
newly deployed in a compact, thin package！

Two low dissipation power MOSFET elements in 1 package,
Contributes to circuit downsizing and weight reduction

This series greatly improves upon the trench gate structure to
achieve low Q_g and low noise.

Cu clip structure achieves low R_on and large current
40V to 120V low withstand voltage MOSFETs

Optimized trench gate structure and trench layout.23% R_on・A reduction