Low withstand voltage MOSFETs

Dual MOSFET　

40V to 100V low withstand voltage Dual MOSFETs

Two low dissipation power MOSFET elements in 1 package.
Equipped with new structure MOSFET Achieves even greater characteristic improvements over Shindengen conventional products.
5×6 mm size package(Can replace SOP8 and HSON types)
Achieves downsizing and reduced ON resistance through Cu clip structure.
Use of a gull-wing shape for one side of the lead alleviates substrate stress.
Plating of the lead tip improves solder wettability and provides high reliability.

Two low dissipation power MOSFET elements in 1 package

Allows for a reduction in mounting area and number of components compared to use of two 1 element devices.
This contributes to circuit downsizing and weight reduction.

Achieves even greater characteristic improvements

Reduction of capacity from Shindengen conventional products reduces FOM (Ron×Ciss) by 25%.
This contributes to a reduction in switching loss.

Utilizes a Cu clip structure

Achieves downsizing and reduced ON resistance through a substantial shift to low resistance and improved heat dissipation.

Gull-wing shaped lead terminals

Alleviates substrate stress while the wettable flank structure improves wettability visibility to provide higher reliability.

Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	R_on[mΩ] V_GS=10V		Series
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	typ	max	Series
P20LF4QTKD	40	20	2.0	12.3	15.3	EETMOS4
P41LF4QTKD	40	41	2.0	5.3	6.7	EETMOS4
P50LF4QTKD	40	50	2.0	4.4	5.5	EETMOS4
P15LF6QTKD	60	15	2.0	24.0	30.0	EETMOS4
P33LF6QTKD	60	33	2.0	10.0	12.5	EETMOS4
P33LF6QLKD	60	33	2.0	10.5	13.1	EETMOS4
P39LF6QTKD	60	39	2.0	8.3	10.4	EETMOS4
P12LF10SLKD	100	12	2.0	34.0	42.0	EETMOS3
P17LF10SLKD	100	17	2.0	29.0	36.0	EETMOS3

EETMOS 5 series

【under development】
40V to 200V low withstand voltage MOSFETs

This series greatly improves upon the trench gate structure of the conventional EETMOS 4 series to achieve low Q_g and low noise.
In addition, use of the Cu clip structure which was successful in the conventional EETMOS 4 series also reduces Ron by approximately 20%.

Contact information

Comparison of dissipation with conventional products

Low Ron and low Qg effects achieve low dissipation and high efficiency.
(Compared to conventional EETMOS 4 under same chip conditions)

Comparison of Ron・A with conventional processes

Comparison carried out with conventional processes as 1

Comparison of noise with conventional products

Comparison of power supply synchronous rectified waves.

LF package (5×6mm)
Part Name	V_DS(min) [V]	I_D(max) [A]	V_TH(typ) [V]	R_on[Ω] V_GS=10V		Status
Part Name	V_DS(min) [V]	I_D(max) [A]	V_TH(typ) [V]	typ	max	Status
P180LF4GNK	40	180	3.0	1.01	1.23	Planning
P120LF6GNK	60	120	3.0	1.60	2.00	RS
P74LF10GNK	100	74	3.0	4.90	6.20	Planning
P36LF20GNK	200	36	3.0	20.70	25.90	Planning

FZ-7p package (TO-263SC)
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	R_on[Ω] V_GS=10V		Status
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	typ	max	Status
P240FZ4GNKA	40	240	3.0	0.85	1.07	Planning
P240FZ6GNKA	60	240	3.0	0.91	1.20	Planning
P130FZ10GNKA	100	130	3.0	3.70	4.60	Planning
P58FZ20GNKA	200	58	3.0	14.30	17.90	Planning

LG package (TOLL)
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	R_on[Ω] V_GS=10V		Status
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	typ	max	Status
P280LG4GNK	40	280	3.0	0.50	0.63	Planning
P280LG6GNK	60	280	3.0	0.77	0.96	Planning
P232LG10GNK	100	232	3.0	1.83	2.20	RS
P85LG20GNK	200	85	3.0	8.70	10.90	RS

EETMOS 3/4 series

40V to 120V low withstand voltage MOSFETs

5×6mm exterior (can replace SOP8 and HSON types)
Cu clip structure achieves low Ron and large current.(up to 140A)
Use of gull-wing shape for one side of lead alleviates substrate stress.
Plating of the lead tip improves solder wettability and provides high reliability.

Spec.

Utilizes a Cu clip structure

Gull-wing shaped leads

New structure 4th generation power MOSFET

LF package (5×6mm)
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	R_on[Ω] V_GS=10V		Status
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	typ	max	Status
P24LF4QLK	40	24	2.0	9.60	12.0	RS
P70LF4QLK	40	70	2.0	3.60	4.50	MP
P105LF4QLK	40	105	2.0	2.10	2.70	MP
P140LF4QLK	40	140	2.0	1.17	1.42	MP
P18LF6QLK	60	18	2.0	21.0	26.0	RS
P38LF6QLK	60	38	2.0	7.90	9.90	MP
P64LF6QLK	60	64	2.0	4.50	5.70	MP
P98LF6QLK	60	98	2.0	2.50	3.20	MP
P46LF7R5SLK	75	46	2.0	8.20	10.30	MP
P72LF7R5SLK	75	72	2.0	4.60	5.80	MP
P32LF10SLK	100	32	2.0	15.70	19.70	MP
P50LF10SLK	100	50	2.0	9.00	11.30	MP
P25LF12SLK	120	25	2.0	23.00	29.00	MP
P40LF12SLK	120	40	2.0	13.00	16.30	MP

FZ-7p package (TO-263SC)
Part Name	V_DS (min) [V]	I_D (max) [A]	V_TH (typ) [V]	R_on[Ω] V_GS=10V		Status
				typ	max
P240FZ4QNKA	40	240	3.0	1.01	1.27	MP
P170FZ6QNKA	60	170	3.0	1.94	2.50	RS

EETMOS 3 series

40V to 120V low withstand voltage MOSFETs

Optimized trench gate structure and trench layout.
23% R_on・A reduction compared to conventional types.
Supports medium withstand voltage from 40V to 120V.
LA(5×6), FB(TO-252), FP(TO-263Adv.), FTO-220AG

Spec.

Withstand voltage-Ron tradeoff curve

100V products achieve 23% Ron・A reduction compared to conventional types.

Part Name	V_DS (min) [V]	I_D (max) [A]	R_on[Ω] V_GS=10V		Package (HOUSE NAME)
Part Name	V_DS (min) [V]	I_D (max) [A]	typ	max	Package (HOUSE NAME)
P24B4SB	40	24	14.8	18.5	FB
P60B4SN	40	60	3.2	4.0	FB
P16B6SB	60	16	29.0	37.0	FB
P60B6SN	60	60	5.3	6.7	FB
P8B10SB	100	8	75.0	94.0	FB
P40B10SN	100	40	13.4	16.8	FB
P32B12SN	120	32	20.0	25.0	FB
P24B15SL	150	24	33.0	42.0	FB
P86F6SN	60	86	2.4	3.0	FTO-220AG
P66F7R5SN	75	66	4.0	5.0	FTO-220AG
P82F7R5SN	75	82	3.0	3.8	FTO-220AG
P22F10SN	100	22	22.0	28.0	FTO-220AG
P40F10SN	100	40	8.5	10.7	FTO-220AG
P50F10SN	100	50	6.9	8.7	FTO-220AG
P32F12SN	120	32	12.4	15.5	FTO-220AG
P40F12SN	120	40	9.5	11.9	FTO-220AG