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New Product
Launch of 650V SiC Schottky Barrier Diodes for High-Efficiency Power Supplies
Nov. 5, 2026
~Improved VF and recovery performance, enabling energy savings~
Shindengen Electric Manufacturing has launched 650V SiC Schottky Barrier Diodes that contribute to high-efficiency power supplies.
Against the backdrop of expanding demand for data centers driven by DX and AI adoption and growing requirements for energy-saving performance, server power supplies and power supplies for industrial equipment requires even greater efficiency.
Meanwhile, as power conversion efficiency improves through higher-frequency operation, conventional Fast Recovery Diodes (FRDs) have faced challenges related to conduction loss and switching loss.
To address these challenges, Shindengen Electric Manufacturing has developed and started sales of 650V SiC Schottky Barrier Diodes(SBD).
By combining SiC and an SBD structure, the devices greatly improve forward voltage (VF) and recovery characteristics compared with conventional FRDs. They contribute to higher efficiency, energy savings, and miniaturization of server and industrial power supplies.
■ Features
Approx. 50% Reduction in VF vs. Conventional FRDs
Forward voltage (VF) has reduced by approximately 50%. Contributes to higher power supply efficiency by reducing conduction loss. 
Significantly Improved Recovery Characteristics
Recovery charge (Qrr) improved by 85%.
Reduces switching loss during high-frequency operation.

Reduced Switching Noise
Optimized design improves IRP affecting noise recovery compared with other SiC Schottky barrier diodes.
Helps suppress noise and reduce peripheral circuit size.

Other Features
・Excellent recovery characteristics through SiC and SBD structure adoption
・Optimized for server and industrial equipment power supplies
・Supports high-efficiency power supplies through high-frequency operation
・Contributes to reduction in size and weight of power circuits
・Applicable to consumer equipment and PFC circuits
■ Prouct specifications
| Products | Absolute Maximum Ratings(Tc=25°C) | Electrical Characteristics(Tc=25°C) |
||||||
| Tj [°C] |
VRRM [V] |
IF typ. [A] |
IFSM [A] |
VF typ. [V] |
IR max. [uA] |
trr/Qrr typ. [ns]/[nC] |
Rth(j-c) max. |
|
| WS20GC65A | -55~175 | 650 | 20 | 76 | 1.47 (IF=20A) |
100 (VR=650V) |
10.0/12.7 * | 2.2 |
| WS20GCC65A | -55~175 | 650 | 20 | 46 | 1.49 (IF=10A*) |
50 (VR=650V*) |
6.7/5.7 * | 1.6 |
| WS40GCC65A | -55~175 | 650 | 40 | 75 | 1.47 (IF=20A*) |
100 (VR=650V*) |
10.0/12.7 * | 1.1 |
*per diode
■ Application Examples
・Server power supplies
・Power supplies for industrial equipment
・Consumer electronics
■ External Dimensions Drawing
■ Availability
September 2026
Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.