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New Product
SiC-MOSFET sample shipments to begin
- Contributing to the increased efficiency and miniaturization of high-voltage equipment -
Nov. 18, 2025
Shindengen Electric Manufacturing will begin shipping samples of SiC-MOSFETs suitable for automotive applications, following the SiC-SBDs for which samples have already been shipped.
In power supply applications for automotive, industrial, and consumer equipment, higher efficiency and lower loss devices are demanded from an energy-saving perspective.
Therefore, replacement of conventional silicon MOSFETs with SiC-MOSFETs capable of high-speed operation is progressing.
However, SiC-MOSFETs also present challenges, such as a narrow gate voltage guarantee range and increased conduction losses due to rising on-resistance (Ron) at high temperatures.
To address these needs and challenges, Shindengen Electric Manufacturing is developing SiC-MOSFETs with 650V, 750V, and 1,200 V withstand voltages suitable for automotive applications.
Packages include TO-247-3L, TO-247-4L, and TO-263-7p. In particular, the TO-247-4L and TO-263-7p adopt a Kelvin source terminal structure that maximizes SiC-MOSFET performance. Key features are as follows:
1. Wide guaranteed gate voltage range improves ease of circuit design
2. Reduction of conduction loss by suppressing the rise in Ron at high temperatures
This contributes to reducing the design burden for our customers. Furthermore, this product is planned to comply with AEC-Q101, enabling its use in automotive applications.
We will continue to expand our lineup of high-current power MOSFETs to meet diverse market needs.
■ Features
Wide gate voltage range
Wider maximum ratings allow for easier circuit design.
Low loss even at high temperatures
Shindengen SiC MOSFETs offer flat on-resistance up to the temperature range of actual use. 
■ Product Specifications
Surface mount package GF
| Products | Absolute Maximum Ratings （Tc=25°C） |
Electrical Characteristics（Tc=25°C） | Package | Automotive | |||
| TCH [°C] |
VDSS [V] |
ID [A] |
VTH typ. [V] |
RDS(ON) typ. [mΩ] |
|||
| WP60GFS75AAK | -55～175 | 750 | 60 | 3.0 | 28 | GF | ● |
| WP38GFS75AAK | -55～175 | 750 | 38 | 3.0 | 50 | GF | ● |
| WP33GFS75AAK | -55～175 | 750 | 33 | 3.0 | 63 | GF | ● |
| WP21GFS75AAK | -55～175 | 750 | 21 | 3.0 | 133 | GF | ● |
| WP55GFS120AAK | -55～175 | 1200 | 55 | 3.0 | 36 | GF | ● |
| WP35GFS120AAK | -55～175 | 1200 | 35 | 3.0 | 65 | GF | ● |
| WP30GFS120AAK | -55～175 | 1200 | 30 | 3.0 | 80 | GF | ● |
| WP19GFS120AAK | -55～175 | 1200 | 19 | 3.0 | 171 | GF | ● |
Through hole device GC/GE
| Products | Absolute Maximum Ratings （Tc=25°C） |
Electrical Characteristics（Tc=25°C） | Package | Automotive | |||
| TCH [°C] |
VDSS [V] |
ID [A] |
VTH typ. [V] |
RDS(ON) typ. [mΩ] |
|||
| WP80GC65A | -55～175 | 650 | 80 | 3.0 | 18 | GC | |
| WP60GC65A | -55～175 | 650 | 60 | 3.0 | 28 | GC | |
| WP38GC65A | -55～175 | 650 | 38 | 3.0 | 50 | GC | |
| WP33GC65A | -55～175 | 650 | 33 | 3.0 | 63 | GC | |
| WP80GES75AK | -55～175 | 750 | 80 | 3.0 | 18 | GE | ● |
| WP60GES75AK | -55～175 | 750 | 60 | 3.0 | 28 | GE | ● |
| WP38GES75AK | -55～175 | 750 | 38 | 3.0 | 50 | GE | ● |
| WP33GES75AK | -55～175 | 750 | 33 | 3.0 | 63 | GE | ● |
| WP65GES120AK | -55～175 | 1200 | 65 | 3.0 | 24 | GE | ● |
| WP55GES120AK | -55～175 | 1200 | 55 | 3.0 | 36 | GE | ● |
| WP35GES120AK | -55～175 | 1200 | 35 | 3.0 | 65 | GE | ● |
| WP30GES120AK | -55～175 | 1200 | 30 | 3.0 | 80 | GE | ● |
■ Typical applications
・Server power supplies
・Industrial equipment power supplies
・Consumer appliances
・On-Board chargers
・Automotive DC/DC converters
・PFC circuits
…etc.
■ Sample shipment
November 2025
■ Availability
August 2026
■ Contact information
Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.
