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Announcing the launch of an High-side Nch-MOSFET gate driver IC with reverse connection and reverse current protection
~A product which contributes to downsizing and reduced dissipation~

Mar. 6, 2024

Shindengen Electric Manufacturing Co., Ltd. has begun sales of the MF2007SW High-side Nch-MOSFET gate driver IC for reverse connection protection and reverse current protection applications.This product can be used as an ideal diode by being combined with an Nch-MOSFET to contribute to downsizing and reduced dissipation in vehicle device applications.
Can also be used as a bidirectional conduction semiconductor relay by being combined with 2 Nch-MOSFETs to achieve faster responsiveness and reduced size compared to conventional mechanical relays.

Overview

Power consumption has increased in automobiles in recent years due to more advanced electronic devices, functional integration, and greater multi-functionality. Conventionally, diodes have been used for reverse connection protection and reverse current protection elements in ECU input parts, however increased dissipation and heat generation from diodes resulting from increased current were impediments to equipment heat dissipation measures and downsizing.There has thus been a growing demand for "ideal diodes" which combine IC and MOSFET to provide rectification while also reducing power dissipation, controlling heat generation, and contributing to downsizing.

Shindengen has launched the MF2007SW High-side Nch-MOSFET gate driver IC in response to these needs. This product can be used as an ideal diode by being combined with an Nch-MOSFET to reduce power dissipation by approximately 72%, and inhibit temperature increases by approximately 51% compared to conventional diodes※1.
This contributes to downsizing and lower power dissipation in equipment which requires reverse connection and reverse current protection, such as automotive products, and output ORing applications.
It can also be used as a bidirectional conduction semiconductor relay※2 by being combined with 2 Nch-MOSFETs to contribute to faster response and downsizing by reducing response time to approximately 1/1000 and mounting area by approximately 96% compared to conventional mechanical relays.

※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND.


■ Features

Reduced power dissipation

 Temperature increase control

When used as an ideal diode※1, this can reduce power dissipation by approximately 72% compared to conventional diodes※3.
※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※3 When using Shindengen's D30FDC4S SBD
When used as an ideal diode※1, this product can inhibit temperature increases by approximately 51% compared to conventional diodes※3.
※1 When combined with Shindengen's P24LF4QNK Nch-MOSFET
※3 When using Shindengen's D30FDC4S SBD

High speed response

When used as a semiconductor relay※2, the product has a fast operation time in response to ON/OFF signals, making it possible to reduce response times to approximately 1/20 for ON signals, and approximately 1/1000 for OFF signals compared to mechanical relays.
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND.

Reliable ON/OFF switching

The minute vibrations that can occur when switching between ON and OFF with mechanical relays, does not occur with semiconductor relays※4.
※4 Vibration can occur under some conditions.


Reduction in mounting area

When used as a semiconductor relay※2, this product can reduce mounting area by approximately 96% compared to conventional relays.
※2 When used as a semiconductor relay, connect the product's REV terminal (no. 7 terminal) to the GND.

Other features

・VDS voltage difference of external Nch-MOSFET output as current
(Sink / source current supplied from IDET terminal)

・AEC-Q100 compliance


■Typical Applications

・ADAS
・Various vehicle installation ECU
・CNC
・Sequencer
・Device inputs and outputs which require O-rings

■Block Diagram

■External Dimensions Diagram


■ Product Specifications

  MF2007SW

Operating voltage

4.5~65V
Operating consumption current 200 μA
Standby current ≦5μA(external signal)
Booster circuits output current 75μA (Typ.)
Boost voltage 12.5V(Typ.)
Reverse current_OFF time 200ns/0.7A (Typ.)
EN_OFF time 50ns/0.12A(Typ.)
When the power supply is connected in reverse Current reduction, External gate discharge
Charge pump Built-in capacitor

■ Factory Location

Higashine Shindengen Co., Ltd. etc.



■ Contact information

Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.

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