Announcing the launch of an ideal diode IC with reverse connection and reverse current protection which reduces conduction dissipation by 55%.
～Contributes to equipment downsizing in low dissipation devices～
May. 30, 2023
Shindengen Electric Manufacturing Co., Ltd. has begun sales of the MF2003SV IC V-DiodeTM ideal diode for reverse connection protection and reverse current protection applications.
By integrating a Pch MOSFET with a reverse connection protection and reverse current protection circuit, this product contributes to lower dissipation for electronic devices.
The product also contributes to downsizing through a reduced mounting area and number of components compared to conventional diodes.
Power consumption has increased in automobiles in recent years due to more advanced electronic devices, functional integration, and greater multi-functionality. Conventionally, diodes have been used for reverse connection protection and reverse current protection elements in ECU input parts, however increased dissipation and heat generation from diodes resulting from increased current were impediments to equipment heat dissipation measures and downsizing. As a result there has been demand for reverse connection protection and reverse current protection elements which can control this dissipation and heat generation.
Compared to conventional diodes, this product reduces conduction dissipation by 55%, reduces temperature increases by 37%, and also reduces mounting area by 75%. This contributes to downsizing and lower dissipation in equipment which requires reverse connection and reverse current protection, such as automotive products, and output ORing applications.
- Significant reduction of dissipation and temperature increases [Fig.1]
Use of a Pch MOSFET reduces conduction dissipation by 55% and temperature increases by 37% compared to convention diodes.
- Compact package which contributes to device downsizing [Fig.2]
Utilizes a WSON8 leadless package with wettable flanks to achieve a 75% reduction in mounting area compared to conventional diodes.
- Reduction of voltage drop during conduction
Use of a Pch MOSFET reduces voltage drop during conduction by 38% compared to conventional diodes※１.（Ron=53mΩ typ.）
- Allows for normal operation even under low input voltage
Protects the Pch MOSFET from negative surge voltage caused by steep fluctuations at the input side.
- Equipped with active clamp function
The Pch MOSFET can be switched on even if the input voltage drops during cranking.
- IC consumption current of 3μA during no load（MAX）
Reduces discharge by batteries when vehicles stop by minimizing unit dark current.
- Other features
42V withstand voltage in consideration of load dump testing.
High speed transient response
※１：Compared to previous Shindengen products.
Fig.1 Significant reduction of dissipation and temperature increases
Fig.2 Compact package which contributes to device downsizing
■ Typical Applications
・Various vehicle installation ECU
Meters, heads-up displays, navigation systems, audio, USB modules, etc.
・Device inputs and outputs which require O-rings
|Built-in Pch MOSFET Ron||53mΩ（typ.）|
|Reverse connection protection||Built-in|
|Reverse current protection||Built-in|
■ External Dimensions Diagram
|1～4||VIN||Power supply terminals|
■ Factory Location
Higashine Shindengen Co., Ltd. etc.
■ Contact information
* The contents revised as of june 1, 2023.
Please note that the information contained in releases is current as of the date of press announcement, but may be subject to change without prior notice.