- TOP
- Lineup
- Exhibition
- Semicon India & electronica India 2025 special page
- MF2008SW V-Diode™
MF2008SW V-Diode™
Reverse current protection Gate Driver
Loss comparison
Temperature rise comparison
Block diagram
Specification
MF2008SW | |
Rated input voltage | -40~70V |
Operating voltage | 4.5-65V |
Operating current consumption |
200μA |
Stand by Current |
≦5μA |
Forward control voltage |
30mV |
Reverse current protection voltage |
<-10mV |
Nch MOSFET Charge Current |
75μA |
AEC-Q100 |
◎ |
Status | ◎ |
Package | TSSOP10 |
*Under Development
Application
- Display-related ECUs (In-vehicle meters, HUD, IVI systems, etc.)
- ECUs related to Advanced Driver Assistance System (ADAS)
- ECUs related to Automated Driving (AD)
Features
- Heat generation and loss reduction
By using a MOSFET as the element, heat generation and loss can be reduced compared with SBD.
Heat generation and loss depend on an external Nch MOSFET.
- Supports a high input voltage range
Supports a wide input voltage range of 4.5-65V, allowing it to be used in a variety of devices.